Model:RE200B
Sensitive element area
2 x 1.0mm2
Substrate material
silicon
Substrate thickness
0.5mm
Working wavelength
7-14 mu m
Average transmittance
> 75%
output signal
> 2.5V
(420 ° K blackbody 1Hz modulation frequency 0.3-3.0hz bandwidth 72.5db gain)
Noise
< 200mV
(mvp-p) (25 ℃)
Balance degree
< 20%
working voltage
2.2-15V
Working current
8.5-24 mu A
(VD = 10V, rs = 47K Ω, 25 ℃)
Source voltage
0.4-1.1V
(VD = 10V, rs = 47K Ω, 25 ℃)
working temperature
-20 ℃ - + 70 ℃
Storage temperature
-35 ℃ - + 80 ℃
field
139 degrees x 126 degrees
Explain
The sensor uses pyroelectric material polarization to detect the infrared radiation with the change of temperature. The dual sensitive element complementary method is used to suppress the interference caused by the change of temperature and improve the working stability of the sensor.
Use
1. The above characteristic indexes are measured under the condition that the source resistance R2 = 47K Ω. When users use the sensor, they can adjust the R2 according to their own needs.
2. Pay attention to the position and field of view of the sensitive element so as to obtain the best optical design.
3. All voltage signals are measured by peak to peak calibration. EA and EB in the balance B represent the peak to peak value of the voltage output signal of the two sensitive elements respectively.
4. When using the sensor, the bending or welding part of the pin shall be more than 4mm away from the base of the pin.
5. Before using the sensor, please refer to the manual first, especially to prevent the wrong pin connection.